ALD110814PCL【PDF 2/11 页】MOSFET N-CH 10.6V QUAD 16PDIP

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ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS

Gate-Source voltage, VGS

Power dissipation

10.6V

10.6V

500 mW

Operating temperature range SCL, PCL, SAL, PAL package 0 ° C to +70 ° C

Storage temperature range

Lead temperature, 10 seconds

-65 ° C to +150 ° C

+260 ° C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V V- = GND TA = 25 ° C unless otherwise specified

ALD110814/ALD110914

Parameter

Gate Threshold Voltage

Offset Voltage

Symbol

VGS(th)

VOS

Min

1.38

Typ

1.40

3

Max

1.42

10

Unit

V

mV

Test Conditions

IDS = 1 μ A, VDS = 0.1V

IDS = 1 μ A

VGS(th)1-VGS(th)2

Offset VoltageTempco

GateThreshold Voltage Tempco

TCVOS

TCVGS(th)

5

-1.7

μ V/ ° C

mV/ ° C

VDS1 = VDS2

ID = 1 μ A, VDS = 0.1V

0.0

+1.6

ID = 20 μ A, VDS = 0.1V

ID = 40 μ A, VDS = 0.1V

On Drain Current

IDS (ON)

12.0

mA

VGS = +10.6V, VDS = +5V

3.0

VGS = +5.4V, VDS = +5V

Forward Transconductance

GFS

1.4

mmho

VGS = +5.4V

VDS = +10.4V

Transconductance Mismatch

? GFS

1.8

%

Output Conductance

GOS

68

μ mho

VGS = +5.4V

VDS = +10.4V

Drain Source On Resistance

RDS (ON)

500

?

VDS = +0.1V

VGS = +5.6V

Drain Source On Resistance

? RDS (ON)

0.5

%

Mismatch

Drain Source Breakdown

BVDSX

10

V

IDS = 1.0 μ A

Voltage

VGS = +0.4V

Drain Source Leakage Current 1

IDS (OFF)

10

400

pA

VGS = +0.4V, VDS =+5V

V- = -5V

4

nA

TA = 125 ° C

Gate Leakage Current 1

IGSS

3

200

pA

VDS = 0V, VGS = 5V

1

nA

TA =125 ° C

Input Capacitance

Transfer Reverse Capacitance

CISS

CRSS

2.5

0.1

pF

pF

Turn-on Delay Time

Turn-off Delay Time

Crosstalk

ton

toff

10

10

60

ns

ns

dB

V+ = 5V, RL= 5K ?

V+ = 5V, RL= 5K ?

f = 100KHz

Notes:

1

Consists of junction leakage currents

ALD110814/ALD110914

Advanced Linear Devices

2 of 11

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